CHARACTERIZATION OF CADMIUM TELLURIDE CRYSTALS GROWN BY DIFFERENT TECHNIQUES FROM THE VAPOR-PHASE

Semi-insulting CdTe bulk crystals were grown from the vapour phase in both closed and semi-open arrangements. The results of the growth expe riments are discussed in terms of various electrical and optical chara cterization methods. Van der Pauw measurements and time dependent char ge measurements (TDCM) were used to determine the resistivity. Deep le vel defects were investigated by means of photoinduced current transie nt spectroscopy (PICTS). For one of the most important fields of appli cation, detector spectra of the vapour phase material are measured and discussed.