STRESS BIREFRINGENCE AND MICROINCLUSIONS IN SUBLIMATION-GROWN BULK CDTE

Citation
G. Kloess et al., STRESS BIREFRINGENCE AND MICROINCLUSIONS IN SUBLIMATION-GROWN BULK CDTE, Journal of crystal growth, 146(1-4), 1995, pp. 130-135
Citations number
29
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
146
Issue
1-4
Year of publication
1995
Pages
130 - 135
Database
ISI
SICI code
0022-0248(1995)146:1-4<130:SBAMIS>2.0.ZU;2-7
Abstract
High quality CdTe bulk crystals are difficult to obtain due to various types of defects such as twins, dislocations, inclusions, and sub-gra in boundaries. In this paper, the influence of different dopants and g rowth conditions on formation, frequency, and stereometry of those def ects are discussed. The crystals have been grown by means of a sublima tion travelling heater method (STHM) using Bridgman seeds. As dopants, the halogens chlorine, bromine, and iodine as well as vanadium and ti tanium have been used. By means of quantitative near-IR polarizing mic roscopy, the mapping of long-range stress fields can be related to irr egularities in crystal growth. Additionally, local stress birefringenc e induced by dislocations and inclusions has been observed. The occurr ence of crystal perturbations in STHM and Bridgman material is compare d.