SILICON LAYERS ON POLYCRYSTALLINE SILICON SUBSTRATES - INFLUENCE OF GROWTH-PARAMETERS DURING LIQUID-PHASE EPITAXY

Authors
STEINER B WAGNER G
Citation
B. Steiner et G. Wagner, SILICON LAYERS ON POLYCRYSTALLINE SILICON SUBSTRATES - INFLUENCE OF GROWTH-PARAMETERS DURING LIQUID-PHASE EPITAXY, Journal of crystal growth, 146(1-4), 1995, pp. 293-298
Citations number
12
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
146
Issue
1-4
Year of publication
1995
Pages
293 - 298
Database
ISI
SICI code
0022-0248(1995)146:1-4<293:SLOPSS>2.0.ZU;2-X
Abstract
In order to study the influence of the process parameters during growt h of thin Si layers on polycrystalline Si substrates we carried out li quid phase epitaxy under different experimental conditions. We investi gated the dependence of layer thickness and morphology of grain bounda ries on these parameters. We also studied the incorporation of dopants (Ga; As) in the Si layers.