EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE OF HEXAGONAL CDS1-XSEX ALLOY-FILMS

Authors
GRUN M GERLACH H BREITKOPF T HETTERICH M REZNITSKY A KALT H KLINGSHIRN C
Citation
M. Grun et al., EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE OF HEXAGONAL CDS1-XSEX ALLOY-FILMS, Journal of crystal growth, 146(1-4), 1995, pp. 414-417
Citations number
8
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
146
Issue
1-4
Year of publication
1995
Pages
414 - 417
Database
ISI
SICI code
0022-0248(1995)146:1-4<414:EAPOHC>2.0.ZU;2-E
Abstract
CdSSe ternary alloy films were grown on GaAs(111) by hot-wall beam epi taxy. The hexagonal crystal phase is obtained. The composition varies from 0 to 40% selenium. Luminescence spectroscopy at low temperatures shows a dominant effect by alloy disorder. Localization of carriers, f or example, is still observed at a pulsed optical excitation density o f 6 mJ/cm(2). The overall quality of the CdSSe films is sufficient to use them as buffer layers for the growth of hexagonal superlattices.