REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION CONTROLLED GROWTH OF ZNSE(ZN,MN)SE QUANTUM-WELL STRUCTURES/

Reflection high-energy electron diffraction (RHEED) intensity oscillat ions have been used to control the shutter operation during molecular beam epitaxy (MBE) of (Zn,Mn)Se/ZnSe quantum well structures. Based on the correlation between layer thickness and shift between shutter ope ration and RHEED intensity oscillation phase reproducible growth of so phisticated multilayer structures has become possible with monolayer t hickness accuracy. An empirical expression has been found relating the mixed crystal composition to the ratio of the RHEED intensity oscilla tion periods characteristic for the growth of either ZnSe or the mixed crystal layer. Based on a deeper understanding of how growth and surf ace smoothing during growth interruptions proceed, high-quality multi- quantum well structures have been grown with atomically flat interface s and one-monolayer accuracy in thickness. This is confirmed by magnet o-optical investigations of such structures.