GROWTH OF INAS GASB STRAINED-LAYER SUPERLATTICES .2./

InAs/GaSb strained layer superlattices (SLSs) have been grown by metal organic vapour phase epitaxy (MOVPE) at atmospheric pressure. Initiall y the interfaces of the SLS have been biased towards pairs of GaAs or InSb using three different gas switching sequences. Room temperature R aman optical modes show that growing the interfaces using an ALE (atom ic layer epitaxy) like switching sequence gives interfaces of very hig h quality probably near the optimum, which is a monolayer. Growing wit h other switching sequences leads to one of the interfaces being non-u niform. By growing samples with alternating (InSb,GaAs or GaAs,InSb) p airs of interfaces it is possible to unambiguously assign this non-uni formity to one of the two possible interfaces for the first time. Furt hermore, the influence of the band overlap on interface type has been studied using optimised SLSs in the semimetallic regime.