METALORGANIC VAPOR-PHASE EPITAXIAL GROWN HETEROINTERFACES TO GAINP WITH GROUP-III AND GROUP-V EXCHANGE

Metalorganic vapor phase epitaxial grown heterointerfaces to GaxIn1-xP (x approximate to 0.5) are studied. Abruptness optimization is carrie d out by means of a gas switching procedure using a hydrogen purge bet ween AsH3 and PH3( )stabilization. X-ray analysis and scanning transmi ssion electron microscopy are used to provide detailed information abo ut interlayers and Ga-segregation from a fitting of simulated to exper imental rocking curves in comparison to atomic-number contrast images. InGaAs/InAlAs heterostructure field-effect transistors on an InP-subs trate are prepared incorporating a highly strained Ga0.5In0.5P spacer layer. Excellent transport data (mu(H300 K) > 11000 cm(2)/V.s) are pro ving that despite the strain and segregation effect in the strained te rnary the lower interface at the channel/spacer transition is highly a brupt.