GROWTH AND CHARACTERIZATION OF 2-DIMENSIONAL GAP ON SI BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Extremely flat GaP layers grown on a Si substrate thinner than the cri tical thickness were characterized by high resolution transmission ele ctron microscopy (HRTEM) and spectroscopic ellipsometry (SE). The HRTE M micrograph shows that the interface roughness of 20 nm thick GaP on Si is 10-15 atomic layers. The SE measurement shows that the compressi ve stress of the GaP layer caused by the lattice mismatch decreases gr adually with increasing the thickness, which means that the lattice re laxation of GaP occurs gradually with increasing the thickness.