TRANSPORT AND REACTION BEHAVIOR IN AIX-2000 PLANETARY METALORGANIC VAPOR-PHASE EPITAXY REACTOR

Authors
BERGUNDE T GUTSCHE D KADINSKI L MAKAROV Y WEYERS M
Citation
T. Bergunde et al., TRANSPORT AND REACTION BEHAVIOR IN AIX-2000 PLANETARY METALORGANIC VAPOR-PHASE EPITAXY REACTOR, Journal of crystal growth, 146(1-4), 1995, pp. 564-569
Citations number
8
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
146
Issue
1-4
Year of publication
1995
Pages
564 - 569
Database
ISI
SICI code
0022-0248(1995)146:1-4<564:TARBIA>2.0.ZU;2-P
Abstract
Basic dependencies of GaAs and AlGaAs growth rate profiles on growth p arameters obtained in an Aix-2000 Planetary reactor have been studied experimentally as well theoretically. Based on the obtained results op timized growth parameters and an optimized inlet geometry are derived that now allow for highly homogeneous growth (Delta d/d < +/-1%) on fi ve 3 inch wafers. Excellent homogeneity is achieved together with high material quality as indicated by the electrical and optical propertie s of the grown structures.