INP-ON-INGAAS INTERFACE WITH CA AND IN COVERAGE IN METALORGANIC VAPOR-PHASE EPITAXY OF INCAAS INP SUPERLATTICES/

At the InP-on-InGaAs interface grown by metalorganic vapor phase epita xy (MOVPE), reducing the As memory effect (As carryover) and simultane ously protecting the InGaAs surface against As-P exchange present a ch allenging problem in achieving a compositional abrupt and high quality interface. In this work, combinations of group III metalorganic sourc es were introduced at the InP-on-InGaAs interface in the absence of an y hydrides. The results prove that severe As carryover exists at this interface. Furthermore, better interface quality is obtained when the InGaAs surface is covered with In rather than with Ga.