GROWTH OF INAS FROM MONOETHYL ARSINE

We report the use of monoethyl arsine, in conjunction with trimethyl i ndium, for the low temperature growth of InAs, and demonstrate its via bility as a source of arsenic for growth by metalorganic chemical vapo ur deposition. Good quality InAs was relatively insensitive to both gr owth temperature, in the range 420-490 degrees C, and V/III ratio, wit h ratios between 1.5 and 5 resulting in epilayers of good morphology. At a temperature of 470 degrees C and trimethyl indium molar flow of 3 .25 mu mol min(-1), the growth rate of InAs was 5 mu m h(-1). The grow th rate was found to be thermally activated, with an activation energy of 37.5 kcal mol(-1) with no evidence for parasitic reactions. The V/ III ratio is lower than for the growth of InAs from arsine, while the temperature dependence of morphology is much less critical than that r eported for growth of InAs from trimethyl indium and tertiary-butyl ar sine.