We report the use of monoethyl arsine, in conjunction with trimethyl i
ndium, for the low temperature growth of InAs, and demonstrate its via
bility as a source of arsenic for growth by metalorganic chemical vapo
ur deposition. Good quality InAs was relatively insensitive to both gr
owth temperature, in the range 420-490 degrees C, and V/III ratio, wit
h ratios between 1.5 and 5 resulting in epilayers of good morphology.
At a temperature of 470 degrees C and trimethyl indium molar flow of 3
.25 mu mol min(-1), the growth rate of InAs was 5 mu m h(-1). The grow
th rate was found to be thermally activated, with an activation energy
of 37.5 kcal mol(-1) with no evidence for parasitic reactions. The V/
III ratio is lower than for the growth of InAs from arsine, while the
temperature dependence of morphology is much less critical than that r
eported for growth of InAs from trimethyl indium and tertiary-butyl ar
sine.