GROWTH AND CHARACTERIZATION OF ZNSE GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY USING DIISOPROPYL SELENIDE AND DIETHYL ZINC

Diisopropyl selenide (DIPSe) and diethyl zinc have been used successfu lly to grow ZnSe epitaxial layers on GaAs by organometallic vapor phas e epitaxy (OMVPE). The epilayers have been characterized by optical mi croscopy, Rutherford backscattering, X-ray diffraction and photolumine scence. High quality crystalline material exhibiting good surface morp hology was obtained in the temperature range 380-500 degrees C and pre ssure range 30-400 Torr. At temperatures below 440 degrees C and a tot al reactor pressure of 300 Torr and above, the growth process is contr olled by surface reaction kinetics. As the pressure is decreased, surf ace reaction processes control the growth process up to 580 degrees C. At 100 and 300 Torr, the activation energy values of the thermally ac tivated growth process are similar to those measured using other alkyl Se sources. The crystalline quality was assessed by RBS as a function of thickness of the films. Photoluminescence spectra are analyzed in detail and the effects of sample thickness, precursor ratios and growt h temperature are discussed.