REACTION ANALYSIS FOR ZRO2 AND Y2O3 THIN-FILM GROWTH BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING BETA-DIKETONATE COMPLEXES

A mathematical model was developed for low-pressure metalorganic chemi cal vapor deposition (LPMOCVD) of ZrO2 and Y2O3 film growth. (4)(tetra kis-2,2,6,6-tetramethyl-3,5-heptandionate zirconium (beta-diketonate c omplex)) and Y(DPM)(3) were used as source materials. The surface reac tion rate constant (or the reactive sticking coefficient) was determin ed by comparing the experimentally observed step coverages on micro-sc ale trenches with those predicted by a simplified Monte Carlo simulati on. A gas-phase reaction rate constant was taken as a disposable param eter to fit the growth rate distributions along the reactor tube by a diffusion reaction transport model. Arrhenius-type equations were prop osed for both surface and gas phase reactions. For the surface reactio ns, the activation energies were 188 kJ/mol (T < 909 K) and 38 kJ/mol (T > 909 K) for ZrO2 and 133 kJ/mol (T < 870 K) for Y2O3. For the gas phase reactions, they were 140 and 123 kJ/mol for ZrO2 and Y2O3, respe ctively. The scanning electron microscopy (SEM) micrographs and X-ray diffraction (XRD) patterns revealed that the crystallographic orientat ion and morphology of the grown films depend on the growth temperature .