THE NUCLEATION AND GROWTH BY MOLECULAR-BEAM EPITAXY OF INAS ON GAAS(110) MISORIENTED SUBSTRATES

Authors
ZHANG XM PASHLEY DW KAMIYA I NEAVE JH JOYCE BA
Citation
Xm. Zhang et al., THE NUCLEATION AND GROWTH BY MOLECULAR-BEAM EPITAXY OF INAS ON GAAS(110) MISORIENTED SUBSTRATES, Journal of crystal growth, 147(1-2), 1995, pp. 234-237
Citations number
8
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
147
Issue
1-2
Year of publication
1995
Pages
234 - 237
Database
ISI
SICI code
0022-0248(1995)147:1-2<234:TNAGBM>2.0.ZU;2-9
Abstract
Molecular beam epitaxy (MBE) growth of GaAs buffer layer and subsequen t deposition of InAs layers on GaAs (110) misoriented by 1.5 degrees t owards (111) A are studied using transmission electron microscopy. The observations show that step bunching occurred during the buffer layer growth. InAs is found to nucleate and grow on the bunched step edges.