THEORY AND EXPERIMENT OF THE TEMPERATURE-DEPENDENCE OF GAALAS GAAS HBTS CHARACTERISTICS FOR POWER-AMPLIFIER APPLICATIONS/

Authors
BAILBE JP ANDRIEUX L CAZARRE A CAMPS T MARTY A TASSELLI J GRANIER H
Citation
Jp. Bailbe et al., THEORY AND EXPERIMENT OF THE TEMPERATURE-DEPENDENCE OF GAALAS GAAS HBTS CHARACTERISTICS FOR POWER-AMPLIFIER APPLICATIONS/, Solid-state electronics, 38(2), 1995, pp. 279-286
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
38
Issue
2
Year of publication
1995
Pages
279 - 286
Database
ISI
SICI code
0038-1101(1995)38:2<279:TAEOTT>2.0.ZU;2-2
Abstract
Modelling of thermal effects of GaAlAs/GaAs HBTs d.c. and r.f. charact eristics is presented. The thermal resistance value is determined expe rimentally and introduced in a model. Good agreement between measured results and those from modelling is demonstrated. The r.f. performance shows a good stability at high temperature (f(max) is reduced by abou t 12% due to temperature rise). For the high signal mode, the simulati on of a power amplifier at 3 GHz is also carried out with and without temperature effects.