ALGAINP ORANGE LIGHT-EMITTING-DIODES GROWN ON MISORIENTED P-GAAS SUBSTRATES

AlGaInP double-heterostructure light-emitting diodes (LEDs) grown on m isoriented p-GaAs substrates cut 15 degrees-off the (100) plane toward the [011] direction have been fabricated. The device performance was found to be strongly dependent on the doping levels in both cladding l ayers. The light output first increases up to 39 mcd and then decrease s with further increases in the Si-doping level. However, for the lowe r cladding layer with high doping levels, the decay of light output is caused by an increase of nonradiative recombination due to the Zn dif fusion into the active layer. When prepared by the optimum doping conc entrations, the external quantum efficiency at 20 mA is 0.6%, correspo nding to a luminous intensity of 39 mcd at 615 nm orange light for the AlGaInP bare chips.