A SURVEY OF THERMAL-ELECTRIC FEEDBACK COEFFICIENTS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS

Authors
Citation
W. Liu et A. Yuksel, A SURVEY OF THERMAL-ELECTRIC FEEDBACK COEFFICIENTS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS, Solid-state electronics, 38(2), 1995, pp. 407-411
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
38
Issue
2
Year of publication
1995
Pages
407 - 411
Database
ISI
SICI code
0038-1101(1995)38:2<407:ASOTFC>2.0.ZU;2-S
Abstract
We measure the thermal-electric feedback coefficients of heterojunctio n bipolar transistors (HBTs) grown by various sources and designed wit h various epitaxial structures. These HBTs include Npn GalnP/GaAs, Npn graded AlGaAs/GaAs HBTs, Npn abrupt AlGaAs/GaAs and Pnp AlGaAs/GaAs H BTs. Despite the drastic difference in the HBTs under investigation, t he measured thermal-electric feedback coefficients are not significant ly different.