ASYMMETRIC (SCHOTTKY-OHMIC) MSM PHOTODETECTOR

Authors
PORGES M SAFRANKOVA J LALINSKY T KOSTIC I RANGELOW IW TEGUDE FJ JAGER D
Citation
M. Porges et al., ASYMMETRIC (SCHOTTKY-OHMIC) MSM PHOTODETECTOR, Solid-state electronics, 38(2), 1995, pp. 425-427
Citations number
2
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
38
Issue
2
Year of publication
1995
Pages
425 - 427
Database
ISI
SICI code
0038-1101(1995)38:2<425:A(MP>2.0.ZU;2-S
Abstract
We present an improvement of responsivity of MSM photodetectors fabric ated on a highly doped GaAs active layer of the heterostructure FET. T he improvement is achieved by replacing the Schottky metallization of one electrode with an ohmic metallization. An improvement of responsiv ity especially in the low voltage region (less than 1 V) is demonstrat ed.