INTERFACE STATE GENERATION DUE TO HIGH-FIELD STRESSING IN MOS OXIDES

Authors
PATRIKAR RM LAL R VASI J
Citation
Rm. Patrikar et al., INTERFACE STATE GENERATION DUE TO HIGH-FIELD STRESSING IN MOS OXIDES, Solid-state electronics, 38(2), 1995, pp. 477-480
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
38
Issue
2
Year of publication
1995
Pages
477 - 480
Database
ISI
SICI code
0038-1101(1995)38:2<477:ISGDTH>2.0.ZU;2-Q
Abstract
The results of high-field stressing experiments for dry oxides, pyroge nic oxides, nitrided pyrogenic oxides and reoxidized nitrided pyrogeni c oxides are presented in this paper. Pyrogenic oxides show poor high- field properties, but nitridation and reoxidation improves them consid erably. In fact, the high-field performance of reoxidized nitrided pyr ogenic oxides is even superior to that of dry oxides. Our results indi cate that improvement occurs due to inhibition of hydrogen drift.