BAND OFFSETS IN HETEROJUNCTIONS OF INGAASSB ALGAASSB/

Authors
POLYAKOV AY MILNES AG GOVORKOV AV DRUZHININA LV TUNITSKAYA IV SMIRNOV NB
Citation
Ay. Polyakov et al., BAND OFFSETS IN HETEROJUNCTIONS OF INGAASSB ALGAASSB/, Solid-state electronics, 38(2), 1995, pp. 525-529
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
38
Issue
2
Year of publication
1995
Pages
525 - 529
Database
ISI
SICI code
0038-1101(1995)38:2<525:BOIHOI>2.0.ZU;2-C
Abstract
The values of band offsets in heterojunctions of In0.15Ga0.85AsySb1-y/ Al0.5Ga0.5AszSb1-z and In0.85Ga0.15AsySb(1-y)/Al0.5Ga0.5AszSb1-z with both quaternaries lattice-matched to GaSb, have been measured by capac itance-voltage studies. The conduction band offsets are, respectively, 0.75-0.77 and 1.25 eV, with the valence band offsets of -(0.0-0.02) a nd -0.15 eV. It is shown that the transitivity rule is observed and th at there is correlation of the valence band offsets with the differenc e in the Schottky barrier heights of corresponding materials.