BREAKDOWN ANALYSIS OF AN ASYMMETRICAL DOUBLE RECESSED POWER MESFETS

FET's with double stepped gate recess are commonly admitted to be pres ently a very convenient structure capable to overcome the fundamental power limitation related to the breakdown voltage. The present paper d eals with an analysis of a double recessed MESFET with a very good and instructive breakdown performance. For the first time we explain an t he basis of gate current observations why the double recess structure allows a large breakdown improvement not only at pinch off voltage but also at open channel. Moreover it is shown that the breakdown optimiz ation is fully compatible with the microwave gain performance.