CHARACTERISTICS OF SELF-INDUCED LIGHTLY-DOPED-DRAIN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH LIQUID-PHASE DEPOSITION SIO2 AS GATE-INSULATOR AND PASSIVATION-LAYER

As the passivation layer on the top of undoped offset region for offse t-gate structured poly-Si TFTs is exposed to hydrogen plasma, a lightl y-doped-like drain region could be equivalently self-induced. The hydr ogenated polycrystalline silicon thin-film transistor of this structur e, named self-induced Lightly-doped-drain (SI-LDD) poly-Si TFTs, was f irst developed with liquid-phase deposition oxide as both the gate ins ulator and the passivation layer. This paper describes the optimum hyd rogenation condition, and the electrical characteristics for the novel SI-LDD poly-Si TFTs. The effects of DC electrical stress on SI-LDD po ly-Si TFTs are also described. Finally a model is proposed to explain the degradation phenomena observed in our SI-LDD devices.