FREQUENCY-RESOLVED MEASUREMENTS FOR THE CHARACTERIZATION OF MOSFET PARAMETERS AT LOW LONGITUDINAL-FIELD

Authors
SELMI L RICCO B
Citation
L. Selmi et B. Ricco, FREQUENCY-RESOLVED MEASUREMENTS FOR THE CHARACTERIZATION OF MOSFET PARAMETERS AT LOW LONGITUDINAL-FIELD, I.E.E.E. transactions on electron devices, 42(2), 1995, pp. 315-320
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
42
Issue
2
Year of publication
1995
Pages
315 - 320
Database
ISI
SICI code
0018-9383(1995)42:2<315:FMFTCO>2.0.ZU;2-7
Abstract
A new technique is presented to extract the main parameters required f or transistor modeling at low longitudinal fields (parasitic resistanc e, intrinsic conductivity factor, threshold voltage, and body factor k ) from a single MOSFET. The method makes use of easy-to-perform ac fre quency-resolved measurements to overcome repeatability and accuracy pr oblems encountered with de data. The technique has been satisfactorily validated on MOSFET's down to 0.8 mu m channel length.