FORWARD-BIASED SAFE OPERATING AREA OF EMITTER SWITCHED THYRISTORS

Authors
IWAMURO N SHEKAR MS BALIGA BJ
Citation
N. Iwamuro et al., FORWARD-BIASED SAFE OPERATING AREA OF EMITTER SWITCHED THYRISTORS, I.E.E.E. transactions on electron devices, 42(2), 1995, pp. 334-339
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
42
Issue
2
Year of publication
1995
Pages
334 - 339
Database
ISI
SICI code
0018-9383(1995)42:2<334:FSOAOE>2.0.ZU;2-D
Abstract
The physical mechanisms for current saturation and destructive failure of the dual channel EST are described. Forward Biased Safe Operating Areas (FBSOAs) at short-circuit state of the 600 V and 2500 V dual cha nnel ESTs are reported. It is demonstrated by numerical simulation tha t the EST offers a better FBSOA than the IGBT. Experimental measuremen ts are reported that corroborate these calculated results.