NEW APPROACH FOR MODELING OF CURRENT DEGRADATION IN HOT-ELECTRON DAMAGED LDD NMOSFETS

Authors
YTTERDAL T KIM SH LEE K FJELDLY TA
Citation
T. Ytterdal et al., NEW APPROACH FOR MODELING OF CURRENT DEGRADATION IN HOT-ELECTRON DAMAGED LDD NMOSFETS, I.E.E.E. transactions on electron devices, 42(2), 1995, pp. 362-365
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
42
Issue
2
Year of publication
1995
Pages
362 - 365
Database
ISI
SICI code
0018-9383(1995)42:2<362:NAFMOC>2.0.ZU;2-V
Abstract
An analytical model describing current degradation in hot-electron dam aged LDD NMOSFETs is proposed. The basic idea of the model is that the drain current degradation can be explained in terms of an increase in the parasitic resistance only. Good agreement with measured data over at least three decades of stress time is obtained with our model.