IN-SITU METALORGANIC GROWTH-CONTROL OF GAALAS THICK LAYERS USING 1.32-MU-M LASER REFLECTOMETRY

We report on the use of in situ reflectometry using 1.32 mu m laser li ght to monitor the metalorganic growth of thick GaAlAs layers. With re spect to the particular growth conditions, the calibration of effectiv e indices was carried out for bulk as well as multi quantum well layer s. This allowed in situ measurements of large thickness layers, Al con centration determination of AlGaAS layers, and metal-semiconductor-fie ld effect transistor (MESFET) structure monitoring with highly improve d precision and reproducibility.