SELENIUM PRECIPITATION IN ZNSE CRYSTALS GROWN BY PHYSICAL VAPOR TRANSPORT

Citation
Kt. Chen et al., SELENIUM PRECIPITATION IN ZNSE CRYSTALS GROWN BY PHYSICAL VAPOR TRANSPORT, Journal of crystal growth, 147(3-4), 1995, pp. 292-296
Citations number
18
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
147
Issue
3-4
Year of publication
1995
Pages
292 - 296
Database
ISI
SICI code
0022-0248(1995)147:3-4<292:SPIZCG>2.0.ZU;2-A
Abstract
The morphology of freshly cleaved ZnSe surfaces was investigated by at omic force microscopy and the results were correlated with differentia l scanning calorimetry (DSC) data. Selenium precipitates in undoped Zn Se crystals grown by the physical vapor transport method were determin ed. The Se inclusions have a size of about 20 nm. A transition tempera ture at 221 degrees C in the DSC measurement is interpreted as the eut ectic temperature of Se-saturated ZnSe. The total amount of the ZnSe/S e-rich second phase was 0.8 wt%, and some segregation effect along low angle grain boundaries was evident.