GROWTH OF CN FILMS BY REACTIVE IONIZED CLUSTER BEAM DEPOSITION

Growth of CN films on Si(111) is realized by reactive ionized cluster beam deposition (RICBD). X-ray diffraction (XRD) shows the occurrence of new CN compound which is supposed to be beta-C3N4 in the films. Ref lection high-energy electron diffraction (RHEED) demonstrated the coex istence of amorphous and crystalline CN compounds. Single bonded CN an d triple bonded CN were identified by infrared absorption spectra. X-r ay photoelectron spectra show 20% N incorporated into the films and ce rtify the bonding energy of C 1s and N 1s. Two peaks are observed in C 1s and N 1s core level spectra. The knoop hardness of CN films is rel ated to accelerating voltage and ionizing current, and reaches 6200 kg f/mm(2).