COMPOSITIONAL AND ELECTRICAL-PROPERTIES OF SI METAL-OXIDE-SEMICONDUCTOR STRUCTURE PREPARED BY DIRECT PHOTOENHANCED CHEMICAL-VAPOR-DEPOSITION USING A DEUTERIUM LAMP

Authors
SHEI SC SU YK HWANG CJ YOKOYAMA M PAN FM
Citation
Sc. Shei et al., COMPOSITIONAL AND ELECTRICAL-PROPERTIES OF SI METAL-OXIDE-SEMICONDUCTOR STRUCTURE PREPARED BY DIRECT PHOTOENHANCED CHEMICAL-VAPOR-DEPOSITION USING A DEUTERIUM LAMP, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(2), 1995, pp. 237-243
Citations number
39
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
13
Issue
2
Year of publication
1995
Pages
237 - 243
Database
ISI
SICI code
0734-2101(1995)13:2<237:CAEOSM>2.0.ZU;2-H