EFFECT OF THE PREDECOMPOSITION OF SIF4 ON THE PROPERTIES OF SILICON DIOXIDE DEPOSITED AT LOW-TEMPERATURES USING SIF4 SIH4/N2O IN A DOUBLE-PLASMA PROCESS/

Authors
ALONSO JC ORTIZ A FALCONY C GARCIA M
Citation
Jc. Alonso et al., EFFECT OF THE PREDECOMPOSITION OF SIF4 ON THE PROPERTIES OF SILICON DIOXIDE DEPOSITED AT LOW-TEMPERATURES USING SIF4 SIH4/N2O IN A DOUBLE-PLASMA PROCESS/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(2), 1995, pp. 244-247
Citations number
15
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
13
Issue
2
Year of publication
1995
Pages
244 - 247
Database
ISI
SICI code
0734-2101(1995)13:2<244:EOTPOS>2.0.ZU;2-F