SIMULATION OF ELECTRON HOLOGRAPHIC CONTOUR MAPS OF LINEAR CHARGED DISLOCATIONS

The possibility to reveal the electric potential distribution arising from straight charged dislocations in silicon by means of electron hol ography techniques in the transmission mode is considered. Using the R ead model for a charged dislocation two experimental arrangements are investigated with the line charge parallel or perpendicular to the ele ctron beam. Although contour maps should be revealable with both set-u ps, it turns out that the second case is more versatile and suitable f or displaying the dislocation charge. Beam injection conditions are al so discussed.