THE INFLUENCE OF HYDROGEN PLASMA TREATMENT ON REVERSE CURRENTS IN INGAP AND INGAALP

Authors
POLYAKOV AY SMIRNOV NB CHELNIY AA BALMASHNOV AA MILNES AG PEARTON SJ
Citation
Ay. Polyakov et al., THE INFLUENCE OF HYDROGEN PLASMA TREATMENT ON REVERSE CURRENTS IN INGAP AND INGAALP, Solid-state electronics, 38(4), 1995, pp. 771-774
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
38
Issue
4
Year of publication
1995
Pages
771 - 774
Database
ISI
SICI code
0038-1101(1995)38:4<771:TIOHPT>2.0.ZU;2-V
Abstract
It is shown that hydrogen plasma treatment leads to a considerable (an order of magnitude or more) decrease in reverse currents of Schottky diodes and mesa diodes on InGaAlP and InGaP. The efficiency of this pr ocess is higher when the treatment is done in a crossed-beams plasma s ource minimizing surface damage.