IMPACT OF THERMAL DISTRIBUTION AND EMITTER LENGTH ON THE PERFORMANCE OF MICROWAVE HETEROJUNCTION BIPOLAR-TRANSISTORS

Authors
KOENIG E SEILER U SCHNEIDER J ERBEN U SCHUMACHER H
Citation
E. Koenig et al., IMPACT OF THERMAL DISTRIBUTION AND EMITTER LENGTH ON THE PERFORMANCE OF MICROWAVE HETEROJUNCTION BIPOLAR-TRANSISTORS, Solid-state electronics, 38(4), 1995, pp. 775-779
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
38
Issue
4
Year of publication
1995
Pages
775 - 779
Database
ISI
SICI code
0038-1101(1995)38:4<775:IOTDAE>2.0.ZU;2-D
Abstract
The relationship between the output characteristics of heterojunction bipolar transistors (HBTs) and emitter finger length is determined on the basis of experimental observations and calculated temperature dist ributions. The emitter finger geometry is shown to be prone to develop ing a thermal gradient and ensuing non-uniform current distribution. T he degree of thermal degradation is correlated to emitter length. Inhe rent disadvantages associated with longer emitters are presented.