A NEW METHOD FOR MEASURING THE SATURATION VELOCITY OF SUBMICRON CMOS TRANSISTORS

Authors
SCHREUTELKAMP RJ DEFERM L
Citation
Rj. Schreutelkamp et L. Deferm, A NEW METHOD FOR MEASURING THE SATURATION VELOCITY OF SUBMICRON CMOS TRANSISTORS, Solid-state electronics, 38(4), 1995, pp. 791-793
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
38
Issue
4
Year of publication
1995
Pages
791 - 793
Database
ISI
SICI code
0038-1101(1995)38:4<791:ANMFMT>2.0.ZU;2-3
Abstract
A method is presented to extract the saturation velocity upsilon(sat) of charge carriers in the inversion channel of submicron length CMOS d evices. The method is more reliable than those available from literatu re since series resistance effects are included in the formulary. For surface channel NMOS transistors, a saturation velocity of upsilon(sat ) = 6.9(+/- 0.5) x 10(6) cm/S was measured while for surface (p-type p oly-Si) and buried (n-type poly-Si) channel PMOS transistors upsilon(s at) = 4.5(+/- 0.5) x 10(6) and 6.0(+/- 0.5) x 10(6) Cm/s, respectively , was found.