TRENCH MOS BARRIER SCHOTTKY (TMBS) RECTIFIER - A SCHOTTKY RECTIFIER WITH HIGHER THAN PARALLEL PLANE BREAKDOWN VOLTAGE

A new rectifier structure, called Trench MOS Barrier Schottky (TMBS) r ectifier, is proposed and demonstrated by modeling and fabrication to have excellent characteristics. Two-dimensional numerical simulations have demonstrated coupling between the charge in the N- drift region a nd the metal on the trench sidewalls resulting in an improved electric field distribution. For epitaxial layer doping of 1 x 10(17) cm(-3), simulations show that break-down voltages of three times the plane par allel breakdown can be achieved with low leakage current. The measured on-state voltage drops for the devices fabricated using 0.5 mu m tech nology at 60 and 300 A/cm(2) were 0.2 and 0.28 V, respectively. Due to smaller drift region resistances, TMBS rectifiers can be operated at large current densities (similar to 300 A/cm(2)) resulting in small ev ice sizes.