FOWLER-NORDHEIM TUNNELING OF CARRIERS IN MOS-TRANSISTORS - 2-DIMENSIONAL SIMULATION OF GATE CURRENT EMPLOYING FIELDAY

Electron and hole current densities across the gate oxide layer of MOS FETs due to Fowler-Nordheim tunneling are calculated by employing the well-known two-dimensional device simulator FIELDAY. The parametric de pendences of these currents on, for example, electric field across the oxide layer, effective masses of electrons and holes, and barrier hei ghts are studied in some detail. Calculated gate currents due to tunne ling, as functions of drain-source voltage and gate-source voltage, ar e compared with available experiments. The agreement between the theor y and experiments appears encouraging.