AN ANALYSIS OF THE KICKOUT MECHANISM IN SILICON

In this paper, the characteristics of the kickout mechanism of diffusi on have been detailed. Solutions have been presented under thermodynam ic equilibrium conditions for an initial delta function impurity of tw o types: (I) all atoms are initially on substitutional sites; (2) all atoms are initially on interstitial sites. The solutions in the two ca ses are shown to be different. Further the analysis is exact to first order terms in g/r, where g is the generation rate and r the recombina tion rate. They are therefore more accurate than any presented so far and are applicable to dopants in silicon in the case of a dilute impur ity.