EFFICIENT COMPUTER-AIDED-DESIGN OF GAAS AND INP MILLIMETER-WAVE TRANSFERRED ELECTRON DEVICES INCLUDING DETAILED THERMAL-ANALYSIS

An accurate calculation of the large-signal a.c. behavior with detaile d thermal considerations is presented for GaAs and InP transferred ele ctron devices. This is accomplished by sequentially solving the temper ature dependent drift and diffusion equations along with a novel heat flow analysis to update the temperature profile in the device. The dri ft and diffusion equations employ both held and temperature dependent mobility and diffusivity derived from Monte Carlo simulations, and the thermal analysis includes all regions of the device. Simulation resul ts are compared to experimental devices with good agreement. The relat ionship between the graded active layer doping profiles, device area a nd device length, with the device temperature, output power and device admittance is clearly illuminated by the temperature dependent large- signal a.c, simulator. For the devices simulated, the complex device a dmittances are calculated over the range of stable operation and at th e maximum power point.