2-DIMENSIONAL HYDRODYNAMIC SIMULATION OF SUBMICROMETER DUAL-GATE MODFETS

Authors
SHERIF K REFKY A SHAWKI T ELSAYED O SALMER G
Citation
K. Sherif et al., 2-DIMENSIONAL HYDRODYNAMIC SIMULATION OF SUBMICROMETER DUAL-GATE MODFETS, Solid-state electronics, 38(4), 1995, pp. 917-929
Citations number
21
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
38
Issue
4
Year of publication
1995
Pages
917 - 929
Database
ISI
SICI code
0038-1101(1995)38:4<917:2HSOSD>2.0.ZU;2-H
Abstract
A hydrodynamic energy model is efficiently used for the simulation of a dual-gate lattice matched MODFET at room temperature. The results ob tained give a good insight of the device physics and permit through th e systematic use of the model to predict the equivalent circuit elemen ts. A simplified model is suggested where these elements as well as d. c. and a.c. characteristics could be precisely characterized depending only on electrodes potential.