A NEW MECHANISM OF NANOSTRUCTURE FORMATION WITH THE STM

Authors
GRATZKE U SIMON G
Citation
U. Gratzke et G. Simon, A NEW MECHANISM OF NANOSTRUCTURE FORMATION WITH THE STM, Microelectronic engineering, 27(1-4), 1995, pp. 35-38
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
27
Issue
1-4
Year of publication
1995
Pages
35 - 38
Database
ISI
SICI code
0167-9317(1995)27:1-4<35:ANMONF>2.0.ZU;2-V
Abstract
The STM is used as a tool for nanostructure formation by applying a hi gh voltage pulse. Usually these nanostructures are explained in terms of field ion evaporation, which is shown to be questionable. For the A u-Au system a new model is suggested on the basis of local melting of the tip by the Nottingham effect.