FABRICATION OF DUAL-GATE FET STRUCTURES WITH SHORT GATE LENGTH AND NMSPACING

Sub-1/4 mum dual-gate FET structures with the two gate electrodes in a single recess trench have been fabricated. Several self-alignment sch emes have been investigated and implemented. A T-shaped and a trapezoi d-shaped gate electrode, each with approximately 200 nm footprint, hav e been positioned less than 200 nm apart. The distance between the ohm ic contacts and the gate electrodes has been successfully minimized by a supplementary self-aligned ohmic contact metallization.