SUB10NM SILICON FIELD EMITTERS PRODUCED BY ELECTRON-BEAM LITHOGRAPHY AND ISOTROPIC PLASMA-ETCHING

There is a growing interest in the fabrication of nanometer scale sili con tips for use as field emitters for that panel displays. Advantages include brightness, efficiency and spatial resolution. Additionally, field emission devices offer an alternative technology for high speed, radiation-resistant microcircuits operating over wide temperature ran ges. This paper reports on a new fabrication route for producing array s of silicon nanotips with precise control of tip size and geometry wi thout any oxidation sharpening step.