THE SCANNING TUNNELING MICROSCOPE AS A TOOL FOR NANOLITHOGRAPHY - WRITING NANOSTRUCTURES ON SI(110) IN AIR

Authors
URBAN J BRAUER S MCKINNON AW HORN J HJORT K PAGNIA H KOOPS HWP HARTNAGEL HL
Citation
J. Urban et al., THE SCANNING TUNNELING MICROSCOPE AS A TOOL FOR NANOLITHOGRAPHY - WRITING NANOSTRUCTURES ON SI(110) IN AIR, Microelectronic engineering, 27(1-4), 1995, pp. 113-116
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
27
Issue
1-4
Year of publication
1995
Pages
113 - 116
Database
ISI
SICI code
0167-9317(1995)27:1-4<113:TSTMAA>2.0.ZU;2-6
Abstract
In this paper, the use of the scanning tunneling microscope (STM) as a tool for nanolithography is presented from a technological viewpoint. STM lithography in air by field-induced oxidation of hydrogen-termina ted Si(110) surfaces is demonstrated. Complex oxide patterns have been produced with high reproducibility and the influence of several exper imental parameters such as tunneling voltage, tunneling current and wr iting speed has been studied in detail. Due to the especially strong e tch anisotropy for the Si (110) surface, using the produced oxide patt erns as an etch mask may enable the fabrication of nanostructures with high lateral densities and high aspect ratios for optoelectronic, ele ctronic or nanomechanical applications.