FABRICATION OF THE EDGE TYPE THIN-FILM WARM CARRIER DEVICES

Authors
SHIMIZU T YASUOKA Y GAMO K
Citation
T. Shimizu et al., FABRICATION OF THE EDGE TYPE THIN-FILM WARM CARRIER DEVICES, Microelectronic engineering, 27(1-4), 1995, pp. 121-124
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
27
Issue
1-4
Year of publication
1995
Pages
121 - 124
Database
ISI
SICI code
0167-9317(1995)27:1-4<121:FOTETT>2.0.ZU;2-G
Abstract
An edge type thin-film warm carrier device which had a contact area le ss than 8x10(-10)cm2 was fabricated by the electron beam lithographic method associated with the precisely controlled dry etching, and the d etection properties of the device were investigated at 9.6 and 94GHz. It was confirmed that the fabricated device operates as an antenna cou pled detector in the microwave and millimeter wave regions, which rect ifies the signal induced on the thin-film antenna with its nonlinear I -V characteristic which persists up to at least 94GHz.