100 KEV ELECTRON-BEAM LITHOGRAPHY PROCESS FOR HIGH-ASPECT-RATIO SUBMICRON STRUCTURES

Authors
BROSSARDT R GOTZ F RAPP B
Citation
R. Brossardt et al., 100 KEV ELECTRON-BEAM LITHOGRAPHY PROCESS FOR HIGH-ASPECT-RATIO SUBMICRON STRUCTURES, Microelectronic engineering, 27(1-4), 1995, pp. 139-142
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
27
Issue
1-4
Year of publication
1995
Pages
139 - 142
Database
ISI
SICI code
0167-9317(1995)27:1-4<139:1KELPF>2.0.ZU;2-Y
Abstract
Using the high-speed negativ resist AZ-PN 100, a single layer process for the generation of high aspect ratio submicron structures was devel oped for the Leica EBPG-5 electron beam writer. It features exposure a t 100 keV electron energy and a special exposure scheme, which allows to reduce the influence of the proximity effect. Both submicron isolat ed lines and submicron gaps in larger features may be resolved simulta neously with one set of exposure parameters. It is shown, that the rem aining influence of the proximity effect on linewidth control is small er than 0.2 mum even in the worst case.