METAL-SEMICONDUCTOR-METAL STRUCTURES AS ELECTRON DETECTOR FOR 1 KV MICROCOLUMNS

Authors
FRESSER HS PRINS FE KERN DP
Citation
Hs. Fresser et al., METAL-SEMICONDUCTOR-METAL STRUCTURES AS ELECTRON DETECTOR FOR 1 KV MICROCOLUMNS, Microelectronic engineering, 27(1-4), 1995, pp. 159-162
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
27
Issue
1-4
Year of publication
1995
Pages
159 - 162
Database
ISI
SICI code
0167-9317(1995)27:1-4<159:MSAEDF>2.0.ZU;2-K
Abstract
We have developed metal-semiconductor-metal structures for low energy electron detection. Devices, with 250 nm wide Ti-fingers and 1.3 mum s pacing, were fabricated using e-beam lithography on high resistivity S i. An amplification of incident low energy electrons of up to 200 is d emonstrated. This feature together with the planar geometry of the dev ice should allow application in 1 kV microcolumns.