SIMULATION ASSISTED DESIGN OF PROCESSES FOR GRAY-TONE LITHOGRAPHY

Citation
W. Henke et al., SIMULATION ASSISTED DESIGN OF PROCESSES FOR GRAY-TONE LITHOGRAPHY, Microelectronic engineering, 27(1-4), 1995, pp. 267-270
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
27
Issue
1-4
Year of publication
1995
Pages
267 - 270
Database
ISI
SICI code
0167-9317(1995)27:1-4<267:SADOPF>2.0.ZU;2-L
Abstract
This paper reports on a study of a methodology for fabrication of arbi trarily shaped silicon structures using standard IC manufacturing proc esses. Particular emphasis is put on the design of halftone transmissi on masks for the lighography step required in the fabrication process of mechanical, optical or electronics components. The design and exper imental investigation of gray-tone masks was supported by lithography simulation. Results are presented for simulated gray-tone patterns as well as experimental trials.