THE EFFECT OF DEFOCUS ON THE PRINTABILITY OF SUBMICRON 5X RETICLE DEFECTS

Authors
Citation
G. Arthur et B. Martin, THE EFFECT OF DEFOCUS ON THE PRINTABILITY OF SUBMICRON 5X RETICLE DEFECTS, Microelectronic engineering, 27(1-4), 1995, pp. 271-274
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
27
Issue
1-4
Year of publication
1995
Pages
271 - 274
Database
ISI
SICI code
0167-9317(1995)27:1-4<271:TEODOT>2.0.ZU;2-T
Abstract
The effect of defocus on the printability of sub-micron 5X reticle def ects is assessed by both practical experiment and computer simulation. A specifically designed test reticle incorporating defects whose size , and proximity to adjacent features, varies within sub-micron line/sp ace arrays was printed onto silicon wafer substrates under production conditions. The results were assessed and are presented by plotting mi nimum printed defect (MPD) vs. array linewidth (L/W). Computer simulat ion of the same test reticle was then carried out and similar graphs p lotted. In addition, the results were replotted as curves of MPD vs. d efocus. Finally, the resist modelling program SOLID has been used to c reate 3D images of the printed defects and thus demonstrate the effect caused by defocus on the resist profiles.