A HIGH-POWER, LOW-CONTAMINATION LASER-PLASMA SOURCE FOR EXTREME UV LITHOGRAPHY

Authors
BIJKERK F SHMAENOK LA SHEVELKO AP BASTIAENSEN RKFJ BRUINEMAN C VANHONK AGJR
Citation
F. Bijkerk et al., A HIGH-POWER, LOW-CONTAMINATION LASER-PLASMA SOURCE FOR EXTREME UV LITHOGRAPHY, Microelectronic engineering, 27(1-4), 1995, pp. 299-301
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
27
Issue
1-4
Year of publication
1995
Pages
299 - 301
Database
ISI
SICI code
0167-9317(1995)27:1-4<299:AHLLSF>2.0.ZU;2-5
Abstract
Experimental results are reported on the development of a low-contamin ation laser-plasma source for extreme ultra-violet lithography (EUVL). The results concern the intensity in the 12.5 to 15.5 nm wavelength r ange and the pollution of EUV optics by plasma debris.