M. Burkhardt et al., GAP CONTROL IN THE FABRICATION OF QUANTUM-EFFECT DEVICES USING X-RAY NANOLITHOGRAPHY, Microelectronic engineering, 27(1-4), 1995, pp. 307-310
We report on recent advances in the fabrication of quantum-effect devi
ces using x-ray nanolithography. A novel scheme for gap control during
the mask replication process was developed that uses capacitance sens
ing in a feedback loop. The capacitance between two masks is measured
and held constant through control of the pressure between them. This s
cheme can be used to maintain the masks at a gap as small as 1 mum, th
us reducing penumbra and diffraction. This capacitive feedback method,
used in mask-to-mask replication can, in principle, also be used for
mask-to-substrate exposures and is thus an additional element in an x-
ray nanolithography technology for sub-70 nm features.